師資
汪青博士,南方科技大學(xué)深港微電子學(xué)院研究教授、正高級(jí)研究員，博士生導(dǎo)師，深圳市高層次人才，深圳市第三代半導(dǎo)體材料和器件重點(diǎn)實(shí)驗(yàn)室副主任，IEEE Senior member，IEEE EDS (Electron Devices Society) Power Devices and ICs 委員會(huì)委員，第三代半導(dǎo)體產(chǎn)業(yè)技術(shù)創(chuàng)新戰(zhàn)略聯(lián)盟標(biāo)準(zhǔn)化委員會(huì)委員，長(zhǎng)期從事GaN材料和器件領(lǐng)域研究工作，主持國(guó)自然青年基金項(xiàng)目、廣東省自然科學(xué)基金青年提升項(xiàng)目、廣東省科技計(jì)劃項(xiàng)目、深圳市基礎(chǔ)研究重點(diǎn)項(xiàng)目和面上項(xiàng)目等，在IJEM、 Advanced Science、Device、IEEE EDL、ISPSD、APL等國(guó)際主流期刊/會(huì)議上共發(fā)表80多篇高水平學(xué)術(shù)論文，授權(quán)/申請(qǐng)國(guó)內(nèi)發(fā)明專利50余項(xiàng)和PCT專利5項(xiàng)，參與制定1項(xiàng)國(guó)家標(biāo)準(zhǔn)、1項(xiàng)行業(yè)標(biāo)準(zhǔn)和2項(xiàng)團(tuán)體標(biāo)準(zhǔn)。
教育經(jīng)歷
1）2008.9-2013.6, 華南理工大學(xué)，材料物理與化學(xué), 博士
2）2004.9-2008.6, 西南大學(xué), 材料物理, 學(xué)士
工作經(jīng)歷
1）2023.8-至今，南方科技大學(xué)，研究教授、研究員，博士生導(dǎo)師；
2）2019.4-2023.7，南方科技大學(xué)，研究副教授、副研究員，碩士生導(dǎo)師;
3）2013.7- 2019.1, 東莞市中鎵半導(dǎo)體科技有限公司, 歷任研發(fā)中心高級(jí)工程師、事業(yè)部副經(jīng)理、研發(fā)部經(jīng)理和制造部主任。
獲得獎(jiǎng)項(xiàng)
1） 2022，獲得中國(guó)發(fā)明協(xié)會(huì)頒發(fā)的發(fā)明創(chuàng)業(yè)獎(jiǎng)創(chuàng)新獎(jiǎng)二等獎(jiǎng)
2） 2021，深圳市高層次人才
3） 2021，南方科技大學(xué)“七一”表彰“優(yōu)秀黨務(wù)工作者”
4） 2021，南方科技大學(xué)工學(xué)院“優(yōu)秀共產(chǎn)黨員”稱號(hào)
5） 2019，獲得第三代半導(dǎo)體產(chǎn)業(yè)技術(shù)創(chuàng)新戰(zhàn)略聯(lián)盟“年度貢獻(xiàn)獎(jiǎng)”
研究方向
GaN功率器件及單片集成電路
GaN射頻器件
GaN智能傳感系統(tǒng)
代表性論文
1、Yi Deng, Yi Zhang*, Xinyuan Zhang, Yang Jiang, Xi Chen, Yansong Yang, Xin Tong, Yao Cai, Wenjuan Liu, Chengliang Sun, Dashan Shang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*.MEMS Oscillators-Network-Based Ising Machine with Grouping Method. Advanced Science. 2024, 2310096.
2、Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
3、Yang Jiang, Shuhui Shi, Shaocong Wang, Fangzhou Du, Peiran Wang, Ning Lin, Wennao Li, Yi Zhang, Leiwei He, Robert Sokolovskij, Jiaqi He, Mujun Li, Dingchen Wang, Xi Chen, Qing Wang*, Hongyu Yu*, and Zhongrui Wang*. In-sensor Reservoir Computing for Gas Pattern Recognition using Pt-AlGaN/GaN HEMTs, Device, 2025, 3(1).
4、Yi Zhang, Zilong Xiong, Lewei He, Yang Jiang, Chenkai Deng, Fangzhou Du, Kangyao Wen, Chuying Tang, Qiaoyu Hu, Mujun Li, Xiaohui Wang, Wenhui Wang, Han Wang, Qing Wang*, Hongyu Yu*, Zhongrui Wang*. Electrically Reconfigurable Surface Acoustic Wave Phase Shifters Based on ZnO TFTs on LiNbO3 Substrate. International Journal of Extreme Manufacturing, 2025, 7(3): 035504.
5、Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022.
6、ChuYing Tang, ChengKai Deng, Chun Fu, Jiaqi He, Fangzhou Du, Peiran Wang, Kangyao Wen,Yi Zhang, Yang Jiang, Nick Tao, Wenyue Yu, Qing Wang*, and HongYu Yu*. Low Contact Resistivity of< 10Ω· mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters, 2024.
7、Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148.
8、Yang Jiang, Fangzhou Du, Kangyao Wen, Jiaqi He, Mujun Li, Chuying Tang, Yi Zhang, Zhongrui Wang*, Qing Wang*, Hongyu Yu*.High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer. International Symposium On Power Semiconductor Devices And Ics (ISPSD), 2024.
9、Fangzhou Du, Yang Jiang, Peiran Wang, Kangyao Wen, Chuying Tang, Jiaqi He, Chenkai Deng, Yi Zhang, Mujun Li, Xiaohui Wang, Qiaoyu Hu, Wenyue Yu, Qing Wang*, HongYu Yu*. Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment[J]. Applied Physics Letters, 2025, 126(1).
10、Yang Jiang, FangZhou Du, KangYao Wen, JiaQi He, PeiRan Wang, MuJun Li, ChuYing Tang, Yi Zhang, ZhongRui Wang*, Qing Wang*, HongYu Yu*. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters[J]. Applied Physics Letters, 2024, 124(24).
6. Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen, Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu, Nick Tao, Qing Wang*, HongYu Yu*. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity. Applied Physics Letters. 28 August 2023; 123 (9): 092104.
7. Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022, 43(9): 1412–1415.
8. Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.
9. Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148
10. Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen; Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu; Nick Tao; Qing Wang* and HongYu Yu*，" Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters， Vol.123, Issue 9, 092104 (2023).
11. Jiaqi He, Kangyao Wen, Peiean Wang, Minghao He, Fangzhou Du, Yang Jiang, Chuying Tang, Nick Tao, Qing Wang*, Gang Li*, and Hongyu Yu*, Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance, Applied Physics Letters (2023), 4 September 2023; 123 (10): 103502.
12. Minghao He ; Kangyao Wen; Chenkai Deng; Mujun Li; Yifan Cui; Qing Wang* ; Hongyu Yu*; Kah-Wee Ang*; "Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET," in IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3191-3195, June 2023.
13. Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang*, HongYu Yu*; Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation. Applied Physics Letters. 5 June 2023; 122 (23): 232107.
14. Honghao Lu, Kangyao Wen, Fangzhou Du, Chuying Tang, Wei-Chih Cheng, Bowen Wei, Honglin Li, Qing Wang*, Hongyu Yu*. "Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering", Materials Science in Semiconductor Processing, 154(2023): 107221
15. Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang*, HongYu Yu*，"Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters. 121, 212105 (2022)
16. Fangzhou Du, Yang Jiang, Zepeng Qiao, Zhanxia Wu, Chuying Tang, Jiaqi He, Guangnan Zhou, Wei-Chih Cheng, Xinyi Tang, Qing Wang*, and Hongyu Yu*. “Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.” Materials Science in Semiconductor Processing: 143, 2022.
17. Wei-Chih Cheng; Fanming Zeng; Minghao He; Qing Wang*; Mansun Chan; Hongyu Yu*. (2020). Quasi-Normally-Off AlGaN/GaN HEMTs with SiNx Stress Liner and Comb Gate for Power Electronics Applications. IEEE Journal Of The Electron Devices Society,8, 1138-1144.